? 2000 ixys all rights reserved 1 - 2 vbe 55-12no7 eco-pac tm single phase rectifier bridge
i dav = 59 a v rrm = 1200 v t rr = 40 ns v rsm v rrm typ v v 1200 1200 vbe 55-12no7 symbol conditions maximum ratings i dav t c = 85c, module 59 a i davm 90 a i fsm t vj = 45c t = 10 ms (50 hz), sine 200 a v r = 0 t = 8.3 ms (60 hz), sine 220 a t vj = t vjm t = 10 ms (50 hz), sine 170 a v r = 0 t = 8.3 ms (60 hz), sine 190 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 205 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 145 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 150 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m4) 1.5-2/14-18 nm/lb.in. weight typ. 19 g features package with dcb ceramic base plate in low profile isolation voltage 3000 v~ planar passivated chips low forward voltage drop leads suitable for pc board soldering applications supplies for dc power equipment input and output rectifiers for high frequency battery dc power supplies field supply for dc motors advantages space and weight savings improved temperature and power cycling capability small and light weight low noise switching data according to iec 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. d k a n symbol conditions characteristic values typ. max. i r v r = v rrm t vj = 25c 0.25 ma v r = v rrm t vj = t vjm 1.0 ma v f i f = 30 a t vj = 25c 2.71 v v t0 for power-loss calculations only 1.31 v r t 15 m r thjc per diode; dc current 0.9 k/w r thch per diode, dc current, typ. 0.3 k/w i rm i f = 50 a, -dif/dt = 100 a/s 6 11.4 a v r = 100 v, l = 0.05 mh, t vj = 100c t rr i f = 1 a; -di/dt = 200 a/s; v r = 30 v, t vj = 25c 40 tbd ns a max. allowable acceleration 50 m/s 2 d s creeping distance on surface 11.2 mm d a creepage distance in air 9.7 mm ixys reserves the right to change limits, test conditions and dimensions. 032 dimensions in mm (1 mm = 0.0394")
? 2000 ixys all rights reserved 2 - 2 vbe 55-12no7 note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 120 140 160 180 200 220 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v m c a/ m s a/ m s t rr ns t fr z thjc a/ m s s vue 55-12no7 / vue 75-12no7 i f = 60a i f = 30a i f = 15a t vj = 100 c v r = 600v t vj = 100 c i f = 30a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 600v t vj = 100 c v r = 600v i f = 60a i f = 30a i f = 15a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 7 transient thermal resistance junction to case t vj =150 c t vj =100 c t vj = 25 c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3012 0.0052 2 0.116 0.0003 3 0.0241 0.0004 4 0.4586 0.0092
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